Bhalisela kwiMidiya yethu yeNtlalo ukuze ufumane iPosi ekhawulezileyo
Ukuqhubela phambili kwetekhnoloji ye-semiconductor laser kube yinto etshintshayo, nto leyo eqhubela phambili uphuculo oluphawulekayo ekusebenzeni, ukusebenza kakuhle, kunye nokuqina kwezi laser. Iinguqulelo ezinamandla aphezulu zisetyenziswa ngakumbi kwiintlobo ngeentlobo zezicelo, ukusuka ekusetyenzisweni kwezorhwebo kwimveliso ye-laser, izixhobo zonyango zonyango, kunye nezisombululo zokubonisa ezibonakalayo ukuya kunxibelelwano olucwangcisiweyo, zombini emhlabeni nangaphandle komhlaba, kunye neenkqubo zokujonga eziphambili. Ezi lasers zinobuchule ziphambili kumacandelo amaninzi emizi-mveliso aphambili kwaye ziphakathi kwembambano yetekhnoloji yehlabathi phakathi kwezizwe eziphambili.
Ukwazisa isizukulwana esilandelayo see-Laser Diode Bar Stacks
Siyamkela umnqweno wokufumana izixhobo ezincinci nezisebenza kakuhle, ishishini lethu liyazingca ngokutyhilauthotho olupholileyo lokuqhubaLM-808-Q2000-F-G10-P0.38-0. Olu luhlu lubonisa inyathelo eliya phambili, liquka i-vacuum coalescence bonding yanamhlanje, izinto ezisetyenziswa kwi-interface, itekhnoloji yokudibanisa, kunye nolawulo lwe-thermal oluguquguqukayo ukuze kufezekiswe iimveliso ezidityaniswe kakhulu, ezisebenza ngokusebenza kakuhle, kwaye zilawula ubushushu ngendlela egqwesileyo ukuze zihlale zithembekile kwaye zisebenze ixesha elide.
Ukuhlangabezana nomceli mngeni wokwanda kweemfuno zoxinzelelo lwamandla oluqhutywa kukutshintsha kweshishini lonke ukuya kwi-miniaturization, siye sayila iyunithi ye-LM-808-Q2000-F-G10-P0.38-0. Le modeli itsha ifezekisa ukwehla okukhulu kwi-pitch yeemveliso zebha zesiqhelo ukusuka kwi-0.73mm ukuya kwi-0.38mm, icinezela kakhulu indawo yokukhupha isitaki. Ngomthamo wokufaka iibha ukuya kuthi ga kwi-10, olu phuculo luyandisa imveliso yesixhobo ukuya kuthi ga kwi-2000W—okubonisa ukunyuka kwe-92% kuxinano lwamandla okukhanya ngaphezu kwezangaphambili.
Uyilo lweModular
Imodeli yethu ye-LM-808-Q2000-F-G10-P0.38-0 yimbonakalo yobunjineli obucokisekileyo, idibanisa ukusebenza kunye noyilo oluncinci olubonelela ngokuguquguquka okungenakuthelekiswa nanto. Ukwakhiwa kwayo okuhlala ixesha elide kunye nokusetyenziswa kwezinto ezikumgangatho ophezulu kuqinisekisa ukusebenza rhoqo kunye nokugcinwa okuncinci, ukunciphisa ukuphazamiseka kokusebenza kunye neendleko ezinxulumene noko—inzuzo ebalulekileyo kumacandelo afana nokuveliswa kwemizi-mveliso kunye nokhathalelo lwempilo.
Uvulindlela kwiZisombululo zoLawulo loBushushu
I-LM-808-Q2000-F-G10-P0.38-0 isebenzisa izixhobo eziqhuba ubushushu ezikumgangatho ophezulu ezihambelana ne-coefficient yebha yokwandiswa kobushushu (CTE), ukuqinisekisa ukufana kunye nokusasazeka kobushushu okubalaseleyo. Sisebenzisa uhlalutyo lwezinto ezilinganiselweyo ukuqikelela nokulawula imeko yobushushu yesixhobo, sifezekisa ulawulo lobushushu oluchanekileyo ngokudibanisa okutsha kwemodeli yobushushu eguquguqukayo nezinzileyo.
Ulawulo lweNkqubo oluQolileyo
Ngokulandela iindlela zemveli kodwa ezisebenzayo zokuwelda i-hard solder, iiprotokholi zethu zokulawula iinkqubo ezicokisekileyo zigcina ukusasazwa kobushushu okufanelekileyo, zikhusela ukuthembeka kokusebenza kwemveliso kunye nokhuseleko nokuhlala ixesha elide.
Iinkcukacha zeMveliso
Imodeli ye-LM-808-Q2000-F-G10-P0.38-0 ibonakaliswa yi-form factor yayo encinci, ubunzima obuphantsi, ukusebenza kakuhle kokuguqulwa kwe-electro-optical, ukuthembeka okuqinileyo, kunye nobomi obude bokusebenza.
| Ipharamitha | Inkcazo |
| Imodeli yeMveliso | LM-808-Q2000-F-G10-P0.38-0 |
| Indlela Yokusebenza | I-QCW |
| Ukuphindaphinda kwePulse | ≤50 Hz |
| Ububanzi bePulse | 200 us |
| Ukusebenza kakuhle | ≤1% |
| Indawo yokutyibiliza ibha | 0.38 mm |
| Amandla Ngebha nganye | 200 W |
| Inani leeBhari | ～10 |
| Ubude beWave Ephakathi (25°C) | 808 nm |
| Ububanzi beSpectral | 2 nm |
| Ububanzi beSpectral FWHM | ≤4 nm |
| Ububanzi bamandla obuyi-90% | ≤6 nm |
| Ukwahlukana kwe-Axis okuKhawulezayo (FWHM) | 35 (eqhelekileyo) ° |
| Ukwahlukana kwe-Slow Axis (FWHM) | 8 (eqhelekileyo) ° |
| Indlela Yokupholisa | TE |
| I-Wavelength Temperature Coefficient | ≤0.28 nm/°C |
| Ukusebenza kwangoku | ≤220 A |
| Umda wangoku | ≤25 A |
| I-Voltage yokusebenza | ≤2 V |
| Ukusebenza kakuhle kwethambeka ngeBha nganye | ≥1.1 W/A |
| Ukusebenza kakuhle kokuguqula | ≥55% |
| Ubushushu bokusebenza | -45~70 °C |
| Ubushushu bokugcina | -55~85 °C |
| Ubomi beNkonzo | ≥1×10⁹ iishots |
Izisombululo zeLaser eziQinisekisiweyo ze-High-Power, Compact Semiconductor
Ii-laser stacks zethu ze-avant-garde, compact, kunye ne-high-power semiconductor zenzelwe ukuba zilungelelaniswe kakhulu. Zilungele ukuhlangabezana neemfuno zomthengi ngamnye kubandakanya inani leebha, ukuphuma kwamandla, kunye nobude bomda, iimveliso zethu zibubungqina bokuzinikela kwethu ekuboneleleni ngezisombululo eziguquguqukayo nezintsha. Isakhelo semodyuli sale yunithi siqinisekisa ukuba zinokulungiswa kwiindlela ezahlukeneyo zokusetyenziswa, zilungiselela abathengi abahlukeneyo. Ukuzinikela kwethu kwizisombululo ezenzelwe wena kuqala kukhokelele ekudalweni kweemveliso zebha ezinobuninzi bamandla obungenakuthelekiswa nanto, nto leyo ephucula amava omsebenzisi ngeendlela ezingazange zenzeke ngaphambili.
Ixesha lokuthumela: Disemba-25-2023