Bhalisela kwiMedia yethu yeNtlalo ukuze ufumane iPosi ngokukhawuleza
Ukuqhubela phambili kwetekhnoloji ye-laser ye-semiconductor kuye kwatshintsha, kwaqhuba uphuculo olumangalisayo ekusebenzeni, ukusebenza kakuhle, kunye nokuqina kwezi lasers. Iinguqulelo zamandla aphakamileyo zisetyenziswa kakhulu kuluhlu lwezicelo, ukusuka kusetyenziso lwezorhwebo kwimveliso ye-laser, izixhobo zonyango zonyango, kunye nezisombululo zokubonisa okubonakalayo kunxibelelwano olucwangcisiweyo, zombini ezisemhlabeni kunye nezangaphandle, kunye neenkqubo zokujolisa eziphambili. Ezi lasers zintsonkothileyo ziphambili kumacandelo aliqela akwinqanaba lemveliso kwaye zisentliziyweni yokhuphiswano lwetekhnoloji yehlabathi phakathi kwezizwe eziphambili.
Ukwazisa isiZukulwana esilandelayo seeLaser Diode Bar Stacks
Ukwamkela ukutyhilwa kwezixhobo ezincinci kunye nezisebenzayo ngakumbi, ishishini lethu liyaziqhenya ngokutyhilaconduction-upholile seriesLM-808-Q2000-F-G10-P0.38-0. Olu ngcelele lumele ukutsibela phambili, okubandakanya ukudityaniswa kwe-vacuum coalescence yokusika, imathiriyeli yojongano, itekhnoloji yokudibanisa, kunye nolawulo oluguquguqukayo lwe-thermal ukuqonda iimveliso ezidityaniswe kakhulu, ezisebenza ngobuchule obumangalisayo, kunye nokuzingca ngolawulo oluphezulu lobushushu obuzinzileyo kunye nobomi obude benkonzo. .
Ukuhlangabezana nomceli mngeni wokwanda kweemfuno zoxinzelelo lwamandla oluqhutywa lushifti lweshishini ngokubanzi kwi-miniaturization, senze iyunithi yobuvulindlela ye-LM-808-Q2000-F-G10-P0.38-0. Lo mzekelo we-groundbreaking ufezekisa ukuhla okumangalisayo kwi-pitch yeemveliso ze-bar eziqhelekileyo ukusuka kwi-0.73mm ukuhla ukuya kwi-0.38mm, icinezela kakhulu indawo yokukhutshwa kwe-stack. Ngomthamo wokwakha ukuya kuthi ga kwiibhari ezili-10, olu phuculo lukhulisa imveliso yesixhobo ukuya kuthi ga kwi-2000W—emele ukonyuka kwe-92% yoxinaniso lwamandla okukhanya ngaphezu kwabangaphambili.
Uyilo lweModyuli
Imodeli yethu ye-LM-808-Q2000-F-G10-P0.38-0 ingumzekelo wobunjineli obucokisekileyo, ukudibanisa ukusebenza kunye noyilo olubambeneyo olunikeza ukuguquguquka okungenakulinganiswa. Ukwakhiwa kwayo okuhlala ixesha elide kunye nokusetyenziswa kwamacandelo aphezulu aqinisekisa ukusebenza okuhambelanayo kunye nokugcinwa okuncinci, ukunciphisa ukuphazamiseka kokusebenza kunye neendleko ezihambelanayo-inzuzo ebalulekileyo kumacandelo afana nokwenziwa kwemizi-mveliso kunye nokhathalelo lwempilo.
Ubuvulindlela kwiZisombululo zoLawulo lweThermal
I-LM-808-Q2000-F-G10-P0.38-0 iphakamisa izinto eziphezulu ze-thermal conductive ezihambelana ne-coefficient ye-bar ye-thermal expansion (CTE), iqinisekisa ukufana kunye nokusabalalisa ubushushu obubalaseleyo. Sisebenzisa uhlalutyo lwento elinganiselweyo ukuqikelela nokulawula imbonakalo-mhlaba eshushu yesixhobo, ukufikelela kulawulo oluchanekileyo lobushushu ngokusebenzisa indibaniselwano entsha yomfuziselo wobushushu odlulayo kunye nozinzileyo.
Ulawulo Lwenkqubo Engqongqo
Ukubambelela kwiindlela zokuwelda eziqinileyo zemveli kodwa ezisebenzayo, iinkqubo zethu zolawulo olucokisekileyo zigcina ukuchithwa kwe-thermal, zikhusela imfezeko yokusebenza kwemveliso kunye nokhuseleko kunye nokuphila ixesha elide.
IiNkcazo zeMveliso
Imodeli ye-LM-808-Q2000-F-G10-P0.38-0 ibonakaliswe yifom ye-diminutive form factor, ukunciphisa ubunzima, ukuguqulwa kokuguqulwa kwe-electro-optical ephezulu, ukuthembeka okuqinileyo, kunye nexesha elide lokusebenza.
| Ipharamitha | Inkcazo |
| Umzekelo weMveliso | LM-808-Q2000-F-G10-P0.38-0 |
| Imo yokusebenza | QCW |
| I-Pulse Frequency | ≤50Hz |
| Pulse Ububanzi | 200 kuthi |
| Ukusebenza kakuhle | ≤1% |
| I-Bar Pitch | 0.38 mm |
| Amandla ngeBar nganye | 200 W |
| Inani leeBar | ～10 |
| Ubude beWaveleng esembindini (25°C) | 808nm |
| Ububanzi beSpectral | 2 nm |
| Ububanzi beSpectral FWHM | ≤4 nm |
| 90% Ububanzi bamandla | ≤6 nm |
| Ukwahluka kwe-Axis ekhawulezayo (FWHM) | 35 (eqhelekileyo) ° |
| I-Slow Axis Divergence (FWHM) | 8 (eqhelekileyo) ° |
| Indlela yokupholisa | TE |
| Ubude boBubushushu beCoefficient | ≤0.28 nm/°C |
| Ukusebenza ngoku | ≤220 A |
| I-Threshold yangoku | ≤25 A |
| I-Voltage yokusebenza | ≤2 V |
| I-Slope Efficiency Per Bar | ≥1.1 W/A |
| Uguqulo oluSebenzayo | ≥55% |
| Ubushushu bokusebenza | -45 ~ 70 °C |
| Ubushushu boGcino | -55~85 °C |
| Ubomi Benkonzo | ≥1×10⁹ izithonga |
I-Tailored High-Power, iCompact Semiconductor Laser Solutions
I-avant-garde yethu, i-compact, i-high-power semiconductor laser stacks ziyilelwe ukuba ziguquguquke kakhulu. Ilungele ukuhlangabezana nemigaqo yomthengi ngamnye kuquka ukubalwa kwebha, ukuphuma kwamandla, kunye nobude bamaza, iimveliso zethu zibubungqina bokuzibophelela kwethu ekuboneleleni ngezisombululo eziguquguqukayo neziyilayo. Isakhelo semodyuli yezi yunithi siqinisekisa ukuba zinokulungelelaniswa noluhlu oluninzi losetyenziso, ukulungiselela abaxumi abahlukeneyo. Ukuzinikela kwethu kwizisombululo zobuqu zobuvulindlela kukhokelele ekudalweni kweemveliso zebar ezinoxinano lwamandla angenakuthelekiswa nanto, siphucula amava omsebenzisi ngeendlela ezingazange zenzeke ngaphambili.
Ixesha lokuposa: Dec-25-2023