Ngophuhliso olukhawulezayo lwetekhnoloji ye-optoelectronic, ii-laser ze-semiconductor zifumene usetyenziso oluxhaphakileyo kwimimandla efana nonxibelelwano, izixhobo zonyango, ukususela kwi-laser, ukusetyenzwa kwamashishini, kunye ne-elektroniki yabathengi. Embindini wobu buchwepheshe kukho i-PN junction, edlala indima ebalulekileyo-kungekhona nje njengomthombo wokukhutshwa kokukhanya kodwa nanjengesiseko sokusebenza kwesixhobo. Eli nqaku linika umbono ocacileyo kunye ocacileyo wesakhiwo, imigaqo, kunye nemisebenzi ephambili ye-PN junction kwi-lasemiconductor lasers.
1. Yintoni iPN Junction?
Isiphambuka se-PN lujongano olwenziwe phakathi kwe-P-type semiconductor kunye ne-N-type semiconductor:
I-P-type semiconductor ifakwe kunye nokungcola okwamkelekileyo, okufana ne-boron (B), okwenza imingxuma ibe yeyona nto ibiza kakhulu abathwali.
I-semiconductor ye-N-type i-doped kunye nokungcola kwabanikeli, njenge-phosphorus (P), okwenza i-electrons uninzi lwabathwali.
Xa izinto ze-P kunye nohlobo lwe-N ziziswa kuqhagamshelwano, ii-electron ezivela kwi-N-region zisasazeka kwi-P-region, kunye nemingxuma evela kwi-P-region isasazeka kwi-N-region. Oku kusasazeka kudala ummandla wokuncipha apho ii-electron kunye nemingxuma ziphinda zihlangane, zishiya ngasemva ii-ion ezihlawuliswayo ezenza indawo yombane yangaphakathi, eyaziwa ngokuba ngumqobo onokuthi ufakwe ngaphakathi.
2. Indima yePN Junction kwiiLaser
(1) I-Carrier Injection
Xa i-laser isebenza, i-PN junction ihamba phambili: i-P-region ixhunywe kwi-voltage positive, kunye ne-N-region ukuya kwi-voltage negative. Oku kurhoxisa intsimi yombane yangaphakathi, ukuvumela ii-electron kunye nemingxuma ukuba ifakwe kwindawo esebenzayo kwi-junction, apho kunokwenzeka ukuba idibanise kwakhona.
(2) Ukukhutshwa kokukhanya: Imvelaphi yokuPhuculwa kokuPhuculwa
Kwingingqi esebenzayo, ii-electron ezitofweyo kunye nemingxuma zidibanisa kwaye zikhulule iifotoni. Ekuqaleni, le nkqubo iphuma ngokuzenzekelayo, kodwa njengoko ingxinano ye-photon isanda, iifotoni zinokuvuselela ngakumbi ukudibanisa i-electron-hole, ukukhulula iifotoni ezongezelelweyo ngesigaba esifanayo, ulwalathiso, kunye namandla-oku kukhutshwa kwe-stimulated.
Le nkqubo yenza isiseko selaser (Ukwandiswa koKhanya ngokuPhuculwa kokuPhumelela kweRadiation).
(3) IGain and Resonant Cavities Form Output Laser
Ukwandisa ukukhutshwa okukhuthazwayo, iilaser ze-semiconductor ziquka i-resonant cavities kumacala omabini e-PN junction. Kwii-lasers ezikhupha i-edge, umzekelo, oku kunokufezekiswa ngokusebenzisa i-Distributed Bragg Reflectors (DBRs) okanye i-mirror coatings ukubonisa ukukhanya emva nangaphambili. Olu cwangciso luvumela amaza okukhanya athile ukuba anyuswe, ekugqibeleni abangele ukuhambelana okukhulu kunye nesiphumo selaser.
3. IZakhiwo zePN Junction kunye nokuPhuculwa koYilo
Ngokuxhomekeke kuhlobo lwe-laser ye-semiconductor, ulwakhiwo lwe-PN lunokwahluka:
I-Heterojunction enye (SH):
I-P-region, N-region, kunye nommandla osebenzayo zenziwe ngezinto ezifanayo. Ummandla wokudibanisa ubanzi kwaye awusebenzi kakuhle.
I-Heterojunction ephindwe kabini (DH):
I-bandgap emxinwa esebenzayo umaleko ifakwe phakathi kwe-P- kunye ne-N-imimandla. Oku kuthintela zombini abathwali kunye neefotoni, ukuphucula kakhulu ukusebenza kakuhle.
Ulwakhiwo lweQuantum Well:
Isebenzisa i-ultra-thin esebenzayo umaleko ukwenza iziphumo zokuvalelwa kwe-quantum, ukuphucula iimpawu zomda kunye nesantya sokumodareyitha.
Ezi zakhiwo zonke ziyilelwe ukunyusa ukusebenza kakuhle kwenaliti yokuthwala, ukudibanisa, kunye nokukhutshwa kokukhanya kwingingqi ye-PN junction.
4. Isiphelo
I-PN junction ngokwenene "intliziyo" ye-laser semiconductor. Ukukwazi kwayo ukutofa abathwali phantsi komkhethe ophambili yeyona nto iphambili yokuvelisa i-laser. Ukusuka kuyilo lwesakhiwo kunye nokukhethwa kwezinto eziphathekayo kulawulo lwefoton, ukusebenza kwesixhobo sonke se-laser kujikeleza ekuphuculeni i-PN junction.
Njengoko ubuchwepheshe be-optoelectronic buqhubeka buqhubela phambili, ukuqonda okunzulu kwe-PN junction physics akugcini nje ukwandisa ukusebenza kwe-laser kodwa kwakha isiseko esiluqilima sophuhliso lwesizukulwana esilandelayo samandla aphezulu, i-high-speed, kunye ne-laser semiconductor ephantsi.
Ixesha lokuposa: May-28-2025